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May 2002
NDC7003P
Dual P-Channel PowerTrench ? MOSFET
General Description
Features
These dual P-Channel Enhancement Mode Power Field
Effect Transistors are produced using Fairchild’s
proprietary Trench Technology. This very high density
? –0.34A, –60 V.
R DS(ON) = 5 ? @ V GS = –10 V
R DS(ON) = 7 ? @ V GS = –4.5 V
process has been designed to minimize on-state
resistance, provide rugged and reliable performance
and fast switching. This product is particularly suited to
low voltage applications requiring a low current high
? Low gate charge
? Fast switching speed
side switch.
? High performance trench technology for low R DS(ON)
? SuperSOT TM -6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
D1
S1
4
5
3
2
SuperSOT
TM
-6
G1
S2
G2
6
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–0.34
A
– Pulsed
–1
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
Package Marking and Ordering Information
Device Marking
.03P
Device
NDC7003P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
NDC7003P Rev B(W)
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